Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations
نویسندگان
چکیده
1. Abstract Low-field mobilities for (100) and (110) substrate orientations in single-gate (SG) and double-gate (DG) operation modes are compared. It is argued that for the same gate voltage twice as high carrier concentration in DG ultra-thin body (UTB) SOI as compared to the SG mode leads to a higher relative occupation of primed subband ladder for (100) substrate orientation. Efficient scattering in primed subbands overpowers the mobility enhancement due to the volume inversion in DG and leads to a lower DG mobility at high effective fields as compared to that for SG UTB SOI.
منابع مشابه
Comparative Study of Low-Field Mobilities in Double- and Single- Gate Ultra-Thin Body SOI for Different Substrate Orientations
متن کامل
MOBILITY MODELING IN SOI FETS FOR DIFFERENT SUBSTRATE ORIENTATIONS AND STRAIN CONDITIONS SHORT TITLE: MOBILITY MODELING IN SOI FETs
Conduction band modification due to shear stress is investigated. Mobility in singleand double-gate SOI FETs is modeled for Silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.
متن کاملPerformance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor
In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...
متن کاملUltimately Thin Double-Gate SOI MOSFETs
The operation of 1–3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mode (for either front or back channel), is systematically analyzed. Strong interface coupling and threshold voltage variation, large influence of substrate depletion underneath the buried oxide, absence of drain current transients, degradation in electron mobility are typical effects in these ultra-thin MO...
متن کاملElectron transport in ultrathin double-gate SOI devices
Electron transport in ultrathin double-gate (DG) silicon-on-insulator (SOI) devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention to the evaluation of stationary drift velocity and low-field mobility at room temperature. A one-electron Monte Carlo simulator has been used. 2001 Elsevier Science B.V. All rights reserved.
متن کامل